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| BPV10 Vishay Telefunken Silicon PIN Photodiode Description BPV10 is a very high speed and high sensitive PIN photodiode in a standard T-13/4 plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. 94 8390 Features D D D D D D Extra fast response times High bandwidth B = 250 MHz at VR=12 V High photo sensitivity Radiant sensitive area A=0.78mm2 Standard T-13/4 (o 5 mm) package with clear lens Angle of half sensitivity = 20 Applications Wide band detector for demodulation of fast signals, industrial electronics, measurement, control circuits and fast interrupters Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tstg Tsd RthJA Value 60 215 100 -55...+100 260 350 Unit V mW C C C K/W x 25 C t x 5 s, 2 mm from body Document Number 81502 Rev. 3, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 1 (5) BPV10 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Open Circuit Voltage g Short Circuit Current Reverse Light Current g Test Conditions IF = 50 mA IR = 100 mA, E = 0 VR = 20 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 EA = 1 klx Ee = 1 mW/cm2, l = 950 nm EA = 1 klx Ee = 1 mW/cm2, l = 950 nm EA = 1 klx, VR = 5 V Ee = 1 mW/cm2, l = 950 nm, VR = 5 V VR = 5 V, l = 950 nm Symbol VF V(BR) Iro CD CD Vo Vo Ik Ik Ira Ira s(l) Min 60 1 11 3.8 480 450 80 65 85 70 0.55 20 920 570...1040 72 3x10-14 3x1012 2.5 2.5 5 Typ 1.0 Max 1.3 Unit V V nA pF pF mV mV 38 mA mA mA mA Absolute Spectral Sensitivity Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Quantum Efficiency l = 950 nm Noise Equivalent Power VR = 20 V, l = 950 nm Detectivity VR = 20 V, l = 950 nm Rise Time Fall Time lp l0.5 h tr tf NEP D* l = 820 nm l = 820 nm VR = 50 V, RL = 50 W, VR = 50 V, RL = 50 W, A/W deg nm nm % W/ Hz cmHz/ W ns ns Typical Characteristics (Tamb = 25_C unless otherwise specified) I ra rel - Relative Reverse Light Current 1000 I ro - Reverse Dark Current ( nA ) 1.4 1.2 100 l=950nm VR=5V 1.0 10 0.8 VR=20V 1 20 94 8436 0.6 40 60 80 100 94 8416 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 2. Relative Reverse Light Current vs. Ambient Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 81502 Rev. 3, 20-May-99 BPV10 Vishay Telefunken S ( l ) rel - Relative Spectral Sensitivity 10 94 8440 1000 Ira - Reverse Light Current ( m A ) 1.0 0.8 0.6 0.4 0.2 0 350 100 10 1 VR=5V l=950nm 0.1 0.01 94 8437 0.1 1 550 750 950 1150 Ee - Irradiance ( mW / cm2 ) l - Wavelength ( nm ) Figure 3. Reverse Light Current vs. Irradiance 100 Ira - Reverse Light Current ( m A ) 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 1 0.1 94 8438 Figure 6. Relative Spectral Sensitivity vs. Wavelength 0 10 20 30 S rel - Relative Sensitivity l=950nm 40 1.0 0.9 0.8 0.7 50 60 70 80 1 10 100 94 8624 0.6 0.4 0.2 0 0.2 0.4 0.6 VR - Reverse Voltage ( V ) Figure 4. Reverse Light Current vs. Reverse Voltage Figure 7. Relative Radiant Sensitivity vs. Angular Displacement 12 CD - Diode Capacitance ( pF ) 10 8 6 4 2 0 0.1 94 8439 E=0 f=1MHz 1 10 100 VR - Reverse Voltage ( V ) Figure 5. Diode Capacitance vs. Reverse Voltage Document Number 81502 Rev. 3, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 3 (5) BPV10 Vishay Telefunken Dimensions in mm 9612199 www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 81502 Rev. 3, 20-May-99 BPV10 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81502 Rev. 3, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
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